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2SK3762
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSW )
2SK3762
unit*F**
Switching Regulator Applications
3.84*}0.2
3.84*} .2 0
10.5 max 10.5 max
4.7 max 4.7max
1.3 6.6 max
6.6 max.
* * * *
Low drain-source ON resistance: R DS (ON) = 5.6 (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 E (V DS = 720 V) A Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
1.3
13.4 min 13.4 min.
3.9 max 3.9 max.
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 900 900 30 2.5 7.5 62 21.6 2.5 6.2 150 -55~150 W mJ A mJ C C Unit V V V A
15.6max. 15.6 max
2.7
1.5max 1.5 max 0.81
0.81 max 0.45 0.45
2.7 2.54 2.54 1 2 3
2.7
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1. 2. 3.
Gate Drain(HEAT SINK) Source
JEDEC JEITA TOSHIBA
TO-220AB SC-46
*\
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.02 83.3 Unit C/W C/W
Weight : 2.0g(typ.)
2
Note 1: Please use devices on conditions that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C, L = 6.3 mH, IAR = 2.5 A, R G = 25 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution.
3 1
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2SK3762
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd V DD 400 V, V GS = 10 V, ID =2.5 A - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS V th RDS (ON) Yf s Ciss Crss Coss tr ton 10 V V GS 0V 50 ID = 1.5 A V OUT RL = 133 V DD 200 V - V DS = 25 V, V GS = 0 V, f = 1 MHz Test Condition V GS = 30 V, V DS = 0 V ID = 10 A, V GS = 0 V V DS = 720 V, V GS = 0 V ID = 10 mA, V GS = 0 V V DS = 10 V, ID = 1 mA V GS = 10 V, ID = 1.5 A V DS = 20 V, ID = 1.5 A Min 30 900 2.0 1.0 Typ. 5.6 2.0 470 10 50 20 60 30 100 12 7 5 Max 10 100 4.0 6.4 pF Unit A V A V V S

ns

nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP V DSF trr Qrr Test Condition IDR =2.5 A, V GS = 0 V IDR = 2.5 A, V GS = 0 V, dIDR /dt = 100 A/s Min Typ. 720 3.6 Max 2.5 7.5 -1.7 Unit A A V ns C
Marking
*|
*| Lot Number TYPE Date Month (Starting from Alphabet A) Year (Last Number of the Christian Era)
K3762
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2SK3762
ID - V DS
2 COMMON SOURCE Tc = 25C PULSE TEST 8 6 3 5.5 5.25 COMMON SOURCE Tc = 25C PULSE TEST
ID - V DS
10 8 6 5.5
DRAIN CURRENT D (A) I
I (A) D DRAIN CURRENT
10
1.6
2.5
2 5.25 1.5 5 1 4.75 0.5 4. 5 VGS = 4 V
1.2
5
0.8
4.75 4. 5 VGS = 4 V
0.4
0 0
4
8
12
16
20
24
0 0
12
24
36
DRAIN-SOURCE VOLTAGE VDS
(V)
DRAIN-SOURCE VOLTAGE VDS
(V)
ID - V GS DRAIN-SOURCE VOLTAGE VDS (V)
5 COMMON SOURCE 40
V DS - V GS
COMMON SOURCE Tc = 25*Z PULSE TEST 30
DRAIN CURRENT D (A) I
4
VDS = 20 V PULSE TEST
3
20
ID = 2.5 A
2 Tc = -55C 25
100 1
10
1.5
0.8 0 0 4 8 12 16 20
0 0
2
4
6
8
10
12
GATE-SOURCE VOLTAGE VGS
(V)
GATE-SOURCE VOLTAGE VGS
(V)
Yf s - ID FORWARD TRANSFER ADMITTANCE Yf s (S)
10 100
RDS (ON) - ID DRAIN-SOURCE ON RESISTANCE RDS (ON) ()
COMMON SOURCE Tc = 25C PULSE TEST
1
Tc = -55C 25 100
100
0.1
10
VGS = 10 V
COMMON SOURCE VDS = 20 V 0.01 0.01 PULSE TEST 0.1 1 10
1 0.01
0.1
1
10
DRAIN CURRENT D (A) I
DRAIN CURRENT D (A) I
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2SK3762
RDS (ON) - Tc
20 10
IDR - V DS DRAIN REVERSE CURRENT DR I (A)
COMMON SOURCE 5 3 Tc = 25C PULSE TEST
DRAIN-SOURCE ON RESISTANCE RDS (ON) ( )
COMMON SOURCE PULSE TEST 16
12
ID = 1.5A
1
8 VGS = 10 V 4 0.8
0.5 0.3 1 10 0.1 0 3 -0.4 VGS = 0V -0.8 -1.2 -1.6
0 -80
-40
0
40
80
120
160
CASE TEMPERATURE Tc ( C)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE - V DS
1000 5
V th - T c
CAPACITANCE C (pF)
Ciss
GATE THRESHOLD VOLTAGE V th (V)
4
100 Coss
3
2 COMMON SOURCE 1 VDS = 10 V ID = 1 mA PULSE TEST 0 -80 -40 0 40 80 120 160
10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 3 5 10 30 50 100 Crss
DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE Tc ( C)
PD - Tc DRAIN-SOURCE VOLTAGE VDS (V)
80
400 300 200
60
VDS 200 VDD = 100 V VGS
16 12 8
400 COMMON SOURCE ID = 5 A Tc = 25C PULSE TEST
40
20
100 00
4 0
0 0
40
80
120
160
10
20
30
40
CASE TEMPERATURE Tc ( C)
TOTAL GATE CHARGE Q (nC) g
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GATE-SOURCE VOLTAGE VGS (V)
500
DYNAMIC INPUT / OUTPUT CHARACTERISTICS
20
DRAIN POWER DISSIPATION PD (W)
2SK3762
r th - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
10
1 Duty=0.5 0.2 0.1 0.1 0.02 0.01 0.05 SINGLE PULSE PDM t T Duty = t/T Rth (ch-c) = 2.02C/W 1* 10* 100* 1 10
0.01 10E
100E
PULSE WIDTH tw (s)
SAFE OPERATING AREA
10 ID max ( PULSED) * ID max ( CONTINUOUS) * 100 s * 25
EA S - Tch
DRAIN CURRENT D (A) I
1 ms * 1 DC OPERATION Tc = 25C
AVALANCHE ENERGY EA S (mJ)
20
15
10
5
0.1
*|SINGLE NONREPETITIVE PULSE
Tc=25*Z CURVES MUST BE DERATED
0 25
50
75
100
125
150
LINEARLY WITH INCREASE IN TEMPERATURE.
CHANNEL TEMPERATURE (INITIAL) Tch (C)
VDSS max 100 1000
0.01 1
10
15 V DRAIN-SOURCE VOLTAGE VDS (V) -15 V
BVDSS IAR V DD V DS
TEST CIRCUIT RG = 25 V DD = 90 V, L = 6.3 mH
WAVE FORM A AS = 1 BVDSS L I2 B 2 - VDD VDSS
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments , medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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